Rd06hhf1-01
Web< Silicon RF Power MOS FET (Discrete) > RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W Publication Date : Jun.2024 5 TEST CIRCUIT(f=30MHz) WebMitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency …
Rd06hhf1-01
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Web13.04.2010, 20:01. Phoenix. Цитата: ... P. S. В плане цены, есть ещё RD06HHF1. На вход подавал 60 мВ при этом на выходе было 4.5 Вт, мерял осциллографом, Были искажения синусоиды, но проявлялись они в зависимости от ...
WebRD06HHF1- 101 Mitsubishi RoHS Compliance Silicon MOSFET Power Transistor 30 MHz 6 Watts (NOS) DESCRIPTION: RD06HHF1 is a MOS FET type transistor specifically designed … WebRD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES. High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz. …
WebOct 7, 2024 · 3PCS RF/VHF/UHF Transistor MITSUBISHI RD06HHF1 RD06HHF1-101 100% Genuine and New. 3PCS RF/VHF/UHF Transistor MITSUBISHI RD06HHF1 RD06HHF1-101 … WebDocument type Title Updated date File type File size Language; Data Sheet-06/27/2024: PDF: 551KB: English: S-parameter-07/23/2024: S2P: 51KB: English
WebRD06HVF1 Datasheet MOS FET type transistor specifically designed for VHF RF power amplifiers applications. - Mitsubishi Electric Semiconductor RF POWER MOS FET Silicon …
WebRD06HHF1 Silicon MOSFET Power Transistor 30MHz,6W RD06HHF1 MITSUBISHI ELECTRIC REV.1 14 May. 2003 3/6 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 0 10 20 30 40 50-10 0 10 20 Pin(dBm) Po(dBm) , Gp(dB) , Idd(A) 0 20 40 60 80 100 η d(%) Ta=+25°C f=30MHz … city bear pressWebVX-1700 Series - R-One Trading Pte Ltd dicks winter socksWebJan 8, 2013 · Jan 6, 2013 #1 I'm building a high frequency amplifier using a common emitter amplifer setup. I want to use an N channel Mosfet as my switch but I wan to know if it can handle a frequency range of 1MHz to 3MHz without sacrificing anything like duty cycle and etc. Thanks. bertus Joined Apr 5, 2008 22,133 Jan 6, 2013 #2 Hello, dick swivellerWeb< Silicon RF Power MOS FET (Discrete) > RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W PublicationDate:Oct.2011 5 TEST CIRCUIT(f=30MHz) city bear in pigeon forgeWebDocument type Title Updated date File type File size Language; Data Sheet-06/27/2024: PDF: 551KB: English: S-parameter-07/23/2024: S2P: 51KB: English citybeat baltimoreRD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz APPLICATION For output stage of high power amplifiers in HF band mobile radio sets. RoHS COMPLIANT RD06HHF1-101 is a RoHS compliant products. dicks winter jackets for menWebdiymore module Store has All Kinds of 1-10Pcs ESP32 S2 미니 WiFi 보드 기반 ESP32-S2FN4R2 ESP32-S2 4MB 플래시 Type-C 연결 호환 MicroPython,미니 블루투스 5.0 디코더 보드 오디오 수신기 BT5.0 프로 MP3 무손실 플레이어, 무선 스테레오 음악 앰프 모듈 케이스 포함,MB85RC256V FRAM 브레이크아웃 보드 메모리 IC I2C 비휘발성 2.7-5.5V IoT ... dicks winter jackets for women